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| product specification www.jmnic.com silicon npn power transistors 2SC4531 description ? with to-3p(h)is package ? high speed ? high voltage ? low saturation voltage ? bult-in damper type applications ? horizontal deflecti on output applications pinning pin description 1 base 2 collector 3 emitter fig.1 simplified outline (to-3p(h)is) and symbol absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 600 v v ebo emitter-base voltage open collector 5 v i c collector current 10 a i cm collector current-peak 20 a i b base current 5 a p c total power dissipation t c =25 ?? 50 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? jm nic
product specification www.jmnic.com jm nic silicon npn power transistors 2SC4531 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ebo emitter-base breakdown voltage i e =200ma ;i c =0 5 v v cesat collector-emitter saturation voltage i c =7a; i b =1.7a 5 v v besat base-emitter saturation voltage i c =7a; i b =1.7a 1.5 v i cbo collector cut-off current v cb =500v; i e =0 10 | a i ebo emitter cut-off current v eb =5v; i c =0 66 100 200 ma h fe dc current gain i c =1a ; v ce =5v 8 c ob collector output capacitance i e =0 ; v cb =10v,f=1mhz 210 pf v f forward voltage(damper diode) i f =7a 1.5 1.8 v f t transition frequency i e =0.1a ; v ce =10v 1 3 mhz switching times inductive load t s storage time 4 6 | s t f fall time i cp =7a;i b1 =1.4a i b2 =-2.8a l y =110 | h;c y =19000pf 0.2 0.5 | s product specification www.jmnic.com jm nic silicon npn power transistors 2SC4531 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.20 mm) product specification www.jmnic.com jm nic silicon npn power transistors 2SC4531 |
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